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Hot sale original MG15J6ES40 GTR module INSULATED GATE BIPOLAR TRANSISTOR High Power Switching Applications
Manufacturer Product Number
MG15J6ES40
Description
MG15J6ES40 GTR module INSULATED GATE BIPOLAR TRANSISTOR High Power Switching Applications
Package Condition
Original
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Product Details
GTR module
Silicon N Channel IGBT
High Power Switching Applications
Motor Control Applications
Product Description
| Type | Description |
| ANSC PART# | ANSC- MG15J6ES40 |
| Ihs Manufacturer | Original |
| Additional Feature | HIGH SPEED |
| Case Connection | ISOLATED |
| Collector Current-Max (IC) | 15 A |
| Collector-Emitter Voltage-Max | 600 V |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
| Gate-Emitter Voltage-Max | 20 V |
| JESD-30 Code | R-PUFM-D13 |
| JESD-609 Code | e0 |
| Number of Elements | 6 |
| Number of Terminals | 13 |
| Operating Temperature-Max | 150 °C |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 80 W |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | TIN LEAD |
| Terminal Form | SOLDER LUG |
| Terminal Position | UPPER |
| Transistor Application | MOTOR CONTROL |
| Transistor Element Material | SILICON |
| Turn-off Time-Nom (toff) | 600 ns |
| Turn-on Time-Nom (ton) | 400 ns |
| VCEsat-Max | 3.5 V |
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MG15J6ES40 GTR module INSULATED GATE BIPOLAR TRANSISTOR High Power Switching Applications
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