Hot-selling and scarce LX5560LL-TR InGaAs - E-Mode pHEMT Low Noise Amplifier QFN spot stock

Product Descriptions

The LX5560 is a low noise amplifier (LNA) for WLAN applications in the 4.9-6.0 GHz frequency range. This LNA is manufactured with an InGaAs Enhancement mode pseudomorphic HEMT (E-pHEMT) process.

It operates with a single positive voltage supply of 3.3V, with noise figure(NF) of 1.7dB while maintaining input third order intercept point(IIP3) of up to +6dBm..

The LNA is implemented with bias circuit and input matching circuit on chip, resulting in simple external circuit. In addition, the on-chip bias circuit provides stable performance of gain, NF and current for voltage variation compared to a general resistor-network bias circuit.

The LX5560 is available in a 12-pin 2mmx2mm micro-lead package(MLPQ12L).

Product Features

0.5µm InGaAs E-mode pHEMT

4.9 - 6GHz Operation

Single 3.3V Supply

Gain ~ 12dB

Noise Figure ~ 1.7dB

Input IP3 ~ +6dBm

Input P1dB ~ +2dBm

On-Chip Bias Circuit

On-Chip Input Match

Simple Output Match

2x2mm² MLPQ 12 Pin

Low Profile 0.5mm 

Product Applications

Wireless LAN 802.11a

WiMax

Product Photos

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