Hot-selling and scarce H5TQ4G83AFR-RDC 4Gb DDR3 SDRAM BGA spot stock

​Product Features

•  VDD=VDDQ=1.5V +/- 0.075V

•   Fully differential clock inputs (CK, CK) operation

•   Differential Data Strobe (DQS, DQS)

•  On chip DLL align DQ, DQS and DQS transition with CK transition

•   DM masks write data-in at the both rising and falling edges of the data strobe

•  All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock

•  Programmable CAS latency 5, 6, 7,8,9, 10, 11, 13 and 14 supported

•   Programmable additive latency 0, CL-1, and CL-2 supported

•  Programmable CAS Write latency (CWL) = 5, 6, 7,8,9,10

•   Programmable burst length 4/8 with both nibble sequential and interleave mode

•   BL switch on the fly

•   8banks

• Average RefreshCycle (Tcaseof0 oC~95 oC)

-7.8 µs at 0oC ~85 oC

- 3.9 µs at 85oC ~ 95 oC

•   JEDEC standard 78ball FBGA(x4/x8), 96ball FBGA(x16

•   Driver strength selected by EMRS

•   Dynamic On Die Termination supported

•  Asynchronous RESET pin supported

•   ZQ calibration supported

•   TDQS (Termination Data Strobe) supported (x8 only)

•   Write Levelization supported

•   8 bit pre-fetch

•   This product in compliance with the RoHS directive.

Product Photos

For more product information, please download the PDF