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Hot-selling and scarce K4B2G1646Q-BYK0 2Gb Q-die DDR3L SDRAM FBGA-96 spot stock

Manufacturer Product Number
K4B2G1646Q-BYK0
Description

K4B2G1646Q-BYK0 2Gb Q-die DDR3L SDRAM FBGA-96 spot stock

Package Condition
Tray
Datasheet
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Product Descriptions

The 2Gb DDR3 SDRAM Q-die is organized as a 16Mbit x 16 I/Os x 8 banksdevice .This synchronous device achieves high speed double-data-ratetransfer rates of up to 1866Mb/sec/pin (DDR3-1866)for general applications .

The chip is designed to comply with the following key DDR3 SDRAM features such as posted CAS,Programmable CWL,Internal (Self)Calibration,On Die Termination using ODT pin and Asynchronous Reset 

All of the control and address inputs are synchronized with a pair of externally supplied differential clocks .Inputs are latched at the crosspoint of differential clocks (CK rising and CK falling).All I/Os are synchronized with apair of bidirectional strobes (DQS and DQS)in a source synchronous fashion .The address bus is used to convey row,column,and bank addressinformation in a RAS/CAS multiplexing style .The DDR3 device operateswith a single 1.35V(1 .28V~1 .45V)or 1.5V(1 .425V~1 .575V)power supplyand 1.35V(1.28V~1.45V)or 1.5V(1.425V~1.575V)V DDQ .

The 2Gb DDR3 Q-die device is available in 96balls FBGA(x16).

Product Features

• JEDEC standard 1.35V(1 .28V~1 .45V)&1.5V(1 .425V~1 .575V)

• V DDQ =1.35V(1.28V~1.45V)&1.5V(1.425V~1.575V)

• 400 MHz f CK for 800Mb/sec/pin,533MHz f CK for 1066Mb/sec/pin,

667MHz f CK for 1333Mb/sec/pin,800MHz f CK for 1600Mb/sec/pin

933MHz f CK for 1866Mb/sec/pin

• 8 Banks

• Programmable CAS Latency(posted CAS):5,6,7,8,9,10,11,13

• Programmable Additive Latency:0,CL-2 or CL-1 clock

• Programmable CAS Write Latency (CWL)=5 (DDR3-800), 6

(DDR3-1066),7 (DDR3-1333),8 (DDR3-1600)and 9(DDR3-1866)

• 8-bit pre-fetch

• Burst Length:8 ,4 with tCCD =4 which does not allow seamless read or write [either On the fly using A12 or MRS]

• Bi-directional Differential Data-Strobe

• Internal(self)calibration :Internal self calibration through ZQ pin (RZQ :240 ohm ±1%)

• On Die Termination using ODT pin

• Average Refresh Period 7.8us at lower than T CASE 85°C,3.9us at 85°C <T CASE <95 °C

• Support Industrial Temp (-40 ~95°C )

-tREFI 7.8us at -40 °C ≤TCASE ≤85°C

-tREFI 3.9us at 85 °C <TCASE ≤95°C

• Asynchronous Reset

• Package : 96 balls FBGA -x16

• All of Lead-Free products are compliant for RoHS

• All of products are Halogen-free

Product Photos

K4B2G1646Q-BYK0

For more product information, please download the PDF

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Hot-selling and scarce K4B2G1646Q-BYK0 2Gb Q-die DDR3L SDRAM FBGA-96 spot stock

K4B2G1646Q-BYK0 2Gb Q-die DDR3L SDRAM FBGA-96 spot stock

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