Hot-selling and scarce LM5112SDX/NOPB Tiny 7-A MOSFET Gate Driver QFN spot stock

Product Descriptions

The LM5112 device MOSFET gate driver provides high peak gate drive current in the tiny 6-pin WSON package (SOT-23 equivalent  footprint) or an 8-pin exposed-pad MSOP package with improved power dissipation required for high frequency operation. The compound output  driver  stage includes MOS and bipolar transistors operating in parallel  that together sink more than 7 A peak from capacitive loads. Combining the unique characteristics of  MOS and bipolar devices reduces drive current variation with voltage  and temperature.    Undervoltage  lockout protection is provided to prevent  damage to the MOSFET due to insufficient gate turnon voltage. The LM5112 device provides both inverting and noninverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.

Product Features

•   LM5112-Q1 is Qualified for Automotive Applications

•   AEC-Q100 Grade 1 Qualified

•   Manufactured on an Automotive Grade Flow

•   Compound CMOS and Bipolar Outputs Reduce Output Current Variation

•   7-A Sink and 3-A Source Current

•   Fast Propagation Times: 25 ns (Typical)

•   Fast Rise and Fall Times: 14 ns or 12 ns Rise or Fall With 2-nF Load

•   Inverting and Non-Inverting Inputs Provide Either Configuration With a Single Device

•   Supply Rail Undervoltage Lockout Protection

•   Dedicated Input Ground (IN_REF) for Split Supply or Single Supply Operation

•   Power Enhanced 6-Pin WSON Package (3 mm × 3 mm) or Thermally Enhanced MSOP-PowerPAD Package

•   Output Swings From VCC to VEE Which Are Negative Relative to Input Ground

Product Applications

•   DC to DC Switch-Mode Power Supplies

•   AC to DC Switch-Mode Power Supplies

•   Solar Microinverters

•   Solenoid and Motor Drives

Product Specifications

Product Photos

For more product information, please download the PDF

WhenCE is HIGH (deselected),the device assumes a standby mode at which the power dissipation can be reduced down to250 µW (typical) with CMOS input levels.