Product Details

The TPS22916xx is a small, single channel load switch using a low leakage P-Channel MOSFET for minimum power loss. Advanced gate control design supports operating voltages as low as 1 V with minimal increase in ON-resistance and power loss. 

Multiple timing options are available to support various system loading conditions. For heavy capacitive loads, the slow turn-on timing in the C version minimizes the inrush current. In cases with light capacitive loads, the fast timing in the B version reduces required wait time. 

The switch ON state is controlled by a digital input that is capable of interfacing directly with low-voltage control signals. Both Active High and Active Low (L) versions are available. When power is first applied, a smart pulldown is used to keep the ON pin from floating until system sequencing is complete. AFter the ON pin is deliberately driven high (≥VIH), the smart pulldown is disconnected to prevent unnecessary power loss. 

The TPS22916xx is available in a small, space saving 0.78 mm × 0.78 mm, 0.4-mm pitch, 0.5- mm height 4-pin Wafer-Chip-Scale (WCSP) package (YFP). The device is characterized for operation over a temperature range of –40°C to +85°C.

Product Features

• Input operating voltage range (VIN): 1 V–5.5 V 

• Maximum continuous current (IMAX): 2 A 

• ON-resistance (RON): 

– 5 VIN = 60 mΩ (typ.), 100 mΩ (85°C max.) 

– 1.8 VIN = 100 mΩ (typ.), 150 mΩ (85°C max.) 

– 1 VIN = 200 mΩ (typ.), 325 mΩ (85°C max.) 

• Ultra-low power consumption:

– ON state (IQ): 0.5 µA (typ.), 1 µA (max.) 

– OFF state (ISD): 10 nA (typ.), 100 nA (max.) 

– TPS22916BL/CL/CNL (ISD): 100 nA (typ.), 300 nA (max.) 

• Smart ON pin pulldown (RPD): 

– ON ≥ VIH (ION): 10 nA (max.) 

– ON ≤ VIL (RPD): 750 kΩ (typ.) 

• Slow Timing in C Version Limits Inrush Current: 

– 5-V turn-on time (tON): 1400 µs at 5 mV/µs 

– 1.8-V turn-on time (tON): 3000 µs at 1 mV/µs

 – 1-V turn-on time (tON): 6500 µs at 0.3 mV/µs 

• Fast timing in b version reduces wait time:

– 5-V turn-on time (tON): 115 µs at 57 mV/µs 

– 1.8-V turn-on time (tON): 250 µs at 12 mV/µs 

– 1-V turn-on time (tON): 510 µs at 3.3 mV/µs 

• Always-ON true Reverse Current Blocking (RCB): 

– Activation current (IRCB): –500 mA (typ.) 

– Reverse leakage (IIN,RCB): –300 nA (max.) 

• Quick Output Discharge (QOD): 150 Ω (typ.) (N version has no QOD) 

• Active low enable option (L versions)

Product Applications

​• Wearables 

• Smartphones 

• Tablets 

• Portable speakers

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