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Hot sale Original JAN2N2222A Transistor TRAN NPN 50V 0.8A TO-218 Bipolar (BJT) Transistor NPN 50 V 800 mA 500 mW Through Hole

Manufacturer Product Number
JAN2N2222A
Description

Original JAN2N2222A Transistors TRANS NPN 50V 0.8A TO218 Bipolar (BJT) Transistor NPN 50 V 800 mA 500 mW Through Hole TO-218

Package Condition
Bulk
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Product Details

Brief Description: The JAN2N2222A is a military-grade NPN bipolar junction transistor (BJT) manufactured . It is designed for use in high-reliability applications and is compliant with MIL-PRF-19500/255.

Features:

  • NPN bipolar junction transistor (BJT) with a maximum collector current of 800mA

  • Collector-base voltage (VCBO) of 75V, collector-emitter breakdown voltage (BVCE) of 50V, and collector-emitter voltage (VCEO) of 50V

  • DC current gain (hFE) of 100 at 150mA and 10V

  • Emitter-base voltage (VEBO) of 6V

  • Maximum power dissipation of 500mW

  • Operating temperature range of -65°C to 200°C

  • Through-hole mounting with a TO-206AA or TO-218 package

  • Non-RoHS compliant and contains lead

Application Grade: The JAN2N2222A is designed for use in high-reliability applications, such as military, aerospace, and industrial systems, where high performance and reliability are critical.

Applications:

  • Amplifiers and oscillators

  • Switches and relays

  • Drivers and interfaces

  • Power supplies and converters

  • Industrial control systems

  • Aerospace and defense systems

  • Medical devices and equipment

Note: The JAN2N2222A is a military-grade transistor and is designed for use in high-reliability applications. It is not intended for general-purpose use or consumer applications.

Product Description

TYPE# DESCRIPTION
ANSC PART# ANSC- JAN2N2222A
Category Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Single Bipolar Transistors
Mfr /
Series -
Packaging Bulk
Part Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 800 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
Power - Max 500 mW
Frequency - Transition -
Operating Temperature -65°C ~ 200°C (TJ)
Grade Military
Qualification MIL-PRF-19500/255
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Supplier Device Package TO-218
Base Product Number 2N2222

Product Photos

JAN2N2222A

Product datasheet 

For more information, please download

 

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Hot sale Original JAN2N2222A Transistor TRAN NPN 50V 0.8A TO-218 Bipolar (BJT) Transistor NPN 50 V 800 mA 500 mW Through Hole

Original JAN2N2222A Transistors TRANS NPN 50V 0.8A TO218 Bipolar (BJT) Transistor NPN 50 V 800 mA 500 mW Through Hole TO-218

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