Hot sale Original Si9407BDY-T1-E3 Transistors MOSFET N-Channel 60 V 6.2A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8

Product Overview 

With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 600pF @ 30V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 3.2A.With a drain-source breakdown voltage of -60V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -60V.4.7A is the drain current of this device, which is the maximum continuous current transistor can carry.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 30 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.

Product Features  

a continuous drain current (ID) of 3.2A
a drain-to-source breakdown voltage of -60V voltage
a 60V drain to source voltage (Vdss)

Product Applications

​SI9407BDY-T1-E3 applications of single MOSFETs transistors.

· Lighting

· Uninterruptible Power Supply

· AC-DC Power Supply

· Synchronous Rectification for ATX 1 Server I Telecom PSU

· Motor drives and Uninterruptible Power Supplies

· Micro Solar Inverter

· DC/DC converters

· Power Tools

· Motor Drives and Uninterruptible Power Supples

· Synchronous Rectification

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