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Original IRF1324S-7PPBF Transistors Single FETs, MOSFETs N-Channel 24 V 240A (Tc) 300W (Tc) Surface Mount D2PAK (7-Lead)
Manufacturer
Manufacturer Product Number
IRF1324S-7PPBF
Description
Original IRF1324S-7PPBF Transistors Single FETs, MOSFETs N-Channel 24 V 240A (Tc) 300W (Tc) Surface Mount D2PAK (7-Lead)
Package Condition
Tube
Product Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 230 mJ.A device's maximal input capacitance is 7700pF @ 19V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 429A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 24V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 240A, which is the maximum continuous current the device can conduct.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 19 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.
Product Features
the avalanche energy rating (Eas) is 230 mJ
a continuous drain current (ID) of 429A
a drain-to-source breakdown voltage of 24V voltage
a threshold voltage of 4V
Product Applications
There are a lot of Infineon Technologies
IRF1324S-7PPBF applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Product Description
|
Type |
Description |
|---|---|
|
ANSC PART# |
ANSC - IRF1324S-7PPBF |
|
Category |
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
|
Mfr |
Infineon Technologies |
|
Series |
HEXFET® |
|
Packaging |
Tube |
|
Part Status |
Obsolete |
|
FET Type |
N-Channel |
|
Technology |
MOSFET (Metal Oxide) |
|
Drain to Source Voltage (Vdss) |
24 V |
|
Current - Continuous Drain (Id) @ 25°C |
240A (Tc) |
|
Drive Voltage (Max Rds On, Min Rds On) |
10V |
|
Rds On (Max) @ Id, Vgs |
1mOhm @ 160A, 10V |
|
Vgs(th) (Max) @ Id |
4V @ 250µA |
|
Gate Charge (Qg) (Max) @ Vgs |
252 nC @ 10 V |
|
Vgs (Max) |
±20V |
|
Input Capacitance (Ciss) (Max) @ Vds |
7700 pF @ 19 V |
|
FET Feature |
- |
|
Power Dissipation (Max) |
300W (Tc) |
|
Operating Temperature |
-55°C ~ 175°C (TJ) |
|
Mounting Type |
Surface Mount |
|
Supplier Device Package |
D2PAK (7-Lead) |
|
Package / Case |
TO-263-7, D2PAK (6 Leads + Tab), TO-263CB |
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Product datasheet
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Original IRF1324S-7PPBF Transistors Single FETs, MOSFETs N-Channel 24 V 240A (Tc) 300W (Tc) Surface Mount D2PAK (7-Lead)
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