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Chip high-voltage P-channel IGBT MOS transistor NCE01P30 TO220 best-selling spot original product
Manufacturer
Manufacturer Product Number
NCE01P30
Description
high-voltage P-channel IGBT field-effect transistor
Package Condition
TUBE
| Part# | NCE01P30 |
| Type： | high-voltage P-channel IGBT field-effect transistor |
| Manufactor | NCE |
| DC | NEW |
| Describe | TO-220 |
| Supplier Device Packaging | TUBE |
| Technology | Trench |
| Polarity | P |
| BVDSS(V) | -100 |
| ID(A) | -30 |
| VTH(V) | -1.9 |
| RDS(ON)@10VTyp(mΩ) | 44 |
| RDS(ON)@4.5VTyp(mΩ) | 48 |
| QG(nC) | 136 |
| PD(W) | 120 |
| PKG | / |
Product Data Book：https://allnewsemi.shop/img/cms/NCE01P30.pdf
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high-voltage P-channel IGBT field-effect transistor
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