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Hot selling product original supply NCE50TD120BP TO-3P high-pressure N-channel IGBT field-effect transistor
Manufacturer
Manufacturer Product Number
NCE50TD120BP
Description
high-voltage N-channel IGBT field-effect transistor
Package Condition
TUBE
| Part# | NCE50TD120BP |
| Type： | high-voltage N-channel IGBT field-effect transistor |
| Manufactor | NCE |
| DC | NEW |
| Describe | TO-3P |
| Supplier Device Packaging | TUBE |
| V(BR)CES (V) | 1200 |
| IC(A)100℃ | 50 |
| PD(W)25℃ | 535 |
| VGE(V) | ±30 |
| VTH(V)Typ | 5.5 |
| VCE(sat)(V)@VGE=15V, 25℃Typ | 1.55 |
| VCE(sat)(V)@VGE=15V, 25℃Max | 1.8 |
| SwitchingFrequency | 1~20KHz |
| Tsc(us) | 10 |
Product Data Book:https://allnewsemi.shop/img/cms/NCE50TD120BP.pdf
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high-voltage N-channel IGBT field-effect transistor
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