Hot sale Original SI4403CDY-T1-GE3 Transistor P-Channel MOSFET (Metal Oxide) 20 V 13.4A (Tc) 15.5mOhm @ 9A, 4.5V Surface Mount

Product Overview 

As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2380pF @ 10V.This device conducts a continuous drain current (ID) of 13.4A, which is the maximum continuous current transistor can conduct.Using VGS=20V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 20V (that is, no charge flow from drain to source).When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 15.5mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 7 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 8V.Activation of any electrical operation happens at threshold voltage, and this transistor has -400mV threshold voltage.This transistor requires a drain-source voltage (Vdss) of 20V.

Product Features  

a continuous drain current (ID) of 13.4A
a drain-to-source breakdown voltage of 20V voltage
single MOSFETs transistor is 15.5mOhm
a threshold voltage of -400mV
a 20V drain to source voltage (Vdss)

Product Applications

There are a lot of Vishay Siliconix
SI4403CDY-T1-GE3 applications of single MOSFETs transistors.

· Motor drives and Uninterruptible Power Supplies

· Micro Solar Inverter

· DC/DC converters

· Power Tools

· Motor Drives and Uninterruptible Power Supples

· Synchronous Rectification

· Battery Protection Circuit

· Telecom 1 Sever Power Supplies

· Industrial Power Supplies

· PFC stages, hard switching PWM stages and resonant switching

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