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Hot sale Original NTD5865NLT4G Transistors MOSFET (Metal Oxide) N-Channel 60 V 46A (Tc) 71W (Tc) Surface Mount DPAK

Manufacturer
ON
Manufacturer Product Number
NTD5865NLT4G
Description

Original NTD5865NLT4G Transistors MOSFET (Metal Oxide) N-Channel 60 V 46A (Tc) 71W (Tc) Surface Mount DPAK

Package Condition
Tape & Reel (TR) Cut Tape (CT)

Product Description

The NTD5865NLT4G is a high-performance, surface-mount N-channel power MOSFET from ON Semiconductor, designed for switching applications. This discrete semiconductor product features a TO-252-3 package with a drain-source breakdown voltage of 60V and a continuous drain current of 46A at 25°C. The device has a low Rds(on) of 16mΩ at 20A and 10V, making it suitable for high-frequency switching applications.

Product Features  

· High current handling capacity of 46A at 25°C

· Low Rds(on) of 16mΩ at 20A and 10V

· High avalanche energy rating of 36mJ

· Operating temperature range of -55°C to 175°C

· RoHS3 compliant and lead-free

· Surface-mount package with a gull-wing terminal form

Product Applications

· Primary applications:

· Switching power supplies

· Motor control systems

· Power conversion systems

· Secondary applications:

· Audio amplifiers

· Lighting control systems

· Industrial control systems

 

Product Description

ANSC PART#

 ANSC- NTD5865NLT4G

Part#

NTD5865NLT4G

Type

Transistors

Manufactor

Original

DC

new

Part Status

Active

Product images

7557.jpg

Product Attributes

Type

Description

Category

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

Mfr

onsemi

Series

-

Packaging

Tape & Reel (TR)

Cut Tape (CT)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60 V

Current - Continuous Drain (Id) @ 25°C

46A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

16mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

29 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1400 pF @ 25 V

FET Feature

-

Power Dissipation (Max)

71W (Tc)

Operating Temperature

-55°C ~ 155°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPAK (2 Leads + Tab), SC-63

Base Product Number

NTD5865

Product datasheet   

For more information, please download

image

image

image   

Payment&Transportation

Official Certificate&Certificate

Standard packaging

Multiple product supply

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Hot sale Original NTD5865NLT4G Transistors MOSFET (Metal Oxide) N-Channel 60 V 46A (Tc) 71W (Tc) Surface Mount DPAK

Original NTD5865NLT4G Transistors MOSFET (Metal Oxide) N-Channel 60 V 46A (Tc) 71W (Tc) Surface Mount DPAK

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