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Hot sale Original FCPF20N60 Transistor MOSFET N-CH 600V 20A TO220F N-Channel 600 V 20A (Tc) 39W (Tc) Through Hole TO-220F-3
Original FCPF20N60 Transistor MOSFET N-CH 600V 20A TO220F N-Channel 600 V 20A (Tc) 39W (Tc) Through Hole TO-220F-3
Product Details
SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and with stand extreme dv/dt rate and higher avalanche energy.Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
Product Features
650V @TJ = 150°C
Typ. RDS(on) = 0.15Ω
Ultra low gate charge (typ. Qg = 75nC)
Low effective output capacitance (typ. Coss.eff = 165pF)
100% avalanche tested
Product Description
Type |
Description |
---|---|
ANSC PART# |
ANSC - FCPF20N60 |
Category |
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
Mfr |
Original |
Series |
SuperFET™ |
Packaging |
Tube |
Part Status |
Not For New Designs |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
600 V |
Current - Continuous Drain (Id) @ 25°C |
20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
190mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id |
5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
98 nC @ 10 V |
Vgs (Max) |
±30V |
Input Capacitance (Ciss) (Max) @ Vds |
3080 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
39W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-220F-3 |
Package / Case |
TO-220-3 Full Pack |
Base Product Number |
FCPF20 |
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Product datasheet
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