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NCE40H30D TO-263 high-voltage N-channel IGBT MOS transistor
Manufacturer
Manufacturer Product Number
NCE40H30D
Description
high-voltage N-channel IGBT field-effect transistor
Package Condition
TUBE
| Part# | NCE40H30D |
| Type： | high-voltage N-channel IGBT MOS transistor |
| Manufactor | NCE |
| DC | NEW |
| Describe | TO-263 |
| Supplier Device Packaging | TUBE |
| Technology | Trench |
| Polarity | N |
| BVDSS(V) | 40 |
| ID(A) | 300 |
| VTH(V) | 1.8 |
| RDS(ON)@10VTyp(mΩ) | 1.4 |
| RDS(ON)@4.5VTyp(mΩ) | 1.9 |
| QG(nC) | 249 |
| PD(W) | 350 |
| PKG | / |
Product Data Book：https://allnewsemi.shop/img/cms/NCE/NCE40H30D.pdf
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high-voltage N-channel IGBT field-effect transistor
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