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Hot sale Original SIR870DP-T1-GE3 Transistor MOSFET N-CH 60A PPAK N-Channel 100 V 60A (Tc) 6.25W (Ta) 104W (Tc) PowerPAK SO-8
Manufacturer
Manufacturer Product Number
SIR870DP-T1-GE3
Description
Original SIR870DP-T1-GE3 Transistor MOSFET N-CH 60A PPAK N-Channel 100 V 60A (Tc) 6.25W (Ta) 104W (Tc) Surface Mount PowerPAK SO-8
Package Condition
Tape & Reel (TR) Cut Tape (CT)
Product Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2840pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 60A continuous drain current (ID).An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 1.2V, which means that it will not activate any of its functions when its threshold voltage reaches 1.2V.For this transistor to work, a voltage 100V is required between drain and source (Vdss).
Product Features
a continuous drain current (ID) of 60A
a threshold voltage of 1.2V
a 100V drain to source voltage (Vdss)
Product Applications
SIR870DP-T1-GE3 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Product Description
|
Type |
Description |
|---|---|
|
ANSC PART# |
ANSC - SIR870DP-T1-GE3 |
|
Category |
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
|
Mfr |
- |
|
Series |
TrenchFET® |
|
Packaging |
Tape & Reel (TR) Cut Tape (CT) |
|
Part Status |
Active |
|
FET Type |
N-Channel |
|
Technology |
MOSFET (Metal Oxide) |
|
Drain to Source Voltage (Vdss) |
100 V |
|
Current - Continuous Drain (Id) @ 25°C |
60A (Tc) |
|
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
|
Rds On (Max) @ Id, Vgs |
6mOhm @ 20A, 10V |
|
Vgs(th) (Max) @ Id |
3V @ 250µA |
|
Gate Charge (Qg) (Max) @ Vgs |
84 nC @ 10 V |
|
Vgs (Max) |
±20V |
|
Input Capacitance (Ciss) (Max) @ Vds |
2840 pF @ 50 V |
|
FET Feature |
- |
|
Power Dissipation (Max) |
6.25W (Ta), 104W (Tc) |
|
Operating Temperature |
-55°C ~ 150°C (TJ) |
|
Mounting Type |
Surface Mount |
|
Supplier Device Package |
PowerPAK® SO-8 |
|
Package / Case |
PowerPAK® SO-8 |
|
Base Product Number |
SIR870 |
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Product datasheet
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Original SIR870DP-T1-GE3 Transistor MOSFET N-CH 60A PPAK N-Channel 100 V 60A (Tc) 6.25W (Ta) 104W (Tc) Surface Mount PowerPAK SO-8
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