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Hot sale Original NVMFS5826NLWFT1G Transistors N-Channel 60 V 8A (Ta) 3.6W (Ta), 39W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Original NVMFS5826NLWFT1G Transistors N-Channel 60 V 8A (Ta) 3.6W (Ta), 39W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Product Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 850pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 26A. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 9 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 60V drain to source voltage (Vdss).
Product Features
a continuous drain current (ID) of 26A
a 60V drain to source voltage (Vdss)
Product Applications
There are a lot of ON Semiconductor
NVMFS5826NLWFT1G applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Product Description
ANSC PART# |
ANSC- NVMFS5826NLWFT1G |
Part# |
NVMFS5826NLWFT1G |
Type: |
Transistors |
Manufactor |
Original |
DC |
new |
Part Status |
Active |
Product images
Product Attributes
Type |
Description |
---|---|
Category |
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
Mfr |
onsemi |
Series |
- |
Packaging |
Tape & Reel (TR) |
Part Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
60 V |
Current - Continuous Drain (Id) @ 25°C |
8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Rds On (Max) @ Id, Vgs |
24mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
17 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
850 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
3.6W (Ta), 39W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Grade |
Automotive |
Qualification |
AEC-Q101 |
Mounting Type |
Surface Mount |
Supplier Device Package |
5-DFN (5x6) (8-SOFL) |
Package / Case |
8-PowerTDFN, 5 Leads |
Base Product Number |
NVMFS5826 |
Product datasheet
For more information, please download
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