Free hotline:
86-755-88844016
+852 2632 9637
Image shown is a representation only.
Exact specifications should be obtained from the product data sheet.
Original stock high-voltage N-channel IGBT MOS tube NCE20TD60BT TO247
Manufacturer
Manufacturer Product Number
NCE20TD60BT
Description
high-voltage N-channel IGBT field-effect transistor
Package Condition
TUBE
| Part# | NCE20TD60BT |
| Type： | high-voltage N-channel IGBT field-effect transistor |
| Manufactor | NCE |
| DC | NEW |
| Describe | TO247 |
| Supplier Device Packaging | TUBE |
| V(BR)CES (V) | 600 |
| IC(A)100℃ | 20 |
| PD(W)25℃ | 163 |
| VGE(V) | ±30 |
| VTH(V)Typ | 5 |
| VCE(sat)(V)@VGE=15V, 25℃Typ | 1.7 |
| VCE(sat)(V)@VGE=15V, 25℃Max | 1.9 |
| Switching Frequency | 0~60KHz |
| Tsc (us) | 5 |
| PKG | / |
Product Data Book：https://allnewsemi.shop/img/cms/NCE/NCE20TD60BT.pdf
.jpg)
.png)
Other Products In The same category:
high-voltage N-channel IGBT field-effect transistor
50000In stock:
Can ship immediately