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Hot sale Original IRF5803TRPBF Power Field-Effect Transistors MOSFET P-CH MICRO6 P-Channel 40 V 3.4A (Ta) Surface Mount

Manufacturer Product Number
IRF5803TRPBF
Description

Original IRF5803TRPBF Power Field-Effect Transistors MOSFET P-CH MICRO6 P-Channel 40 V 3.4A (Ta) Surface Mount

Package Condition
Tape & Reel (TR) Cut Tape (CT)
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Product Overview 


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1110pF @ 25V.This device conducts a continuous drain current (ID) of -3.4A, which is the maximum continuous current transistor can conduct.Using VGS=-40V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -40V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 88 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 43 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -3V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 40V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

Product Features  

a continuous drain current (ID) of -3.4A
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 88 ns
a threshold voltage of -3V
a 40V drain to source voltage (Vdss)


Product Applications


IRF5803TRPBF applications of single MOSFETs transistors.

  • Motor drives and Uninterruptible Power Supplies

  • Micro Solar Inverter

  • DC/DC converters

  • Power Tools

  • Motor Drives and Uninterruptible Power Supples

  • Synchronous Rectification

  • Battery Protection Circuit

  • Telecom 1 Sever Power Supplies

  • Industrial Power Supplies

  • PFC stages, hard switching PWM stages and resonant switching

Product Description

TYPE DESCRIPTION
ANSC PART# ANSC- IRF5803TRPBF
Category Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Mfr Original
Series HEXFET®
Packaging Tape & Reel (TR)
Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 112mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1110 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Micro6™(TSOP-6)
Package / Case SOT-23-6 Thin, TSOT-23-6
Base Product Number IRF5803

Actual image of the product 

IRF5803TRPBF

Product datasheet 

For more information, please download

   

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Hot sale Original IRF5803TRPBF Power Field-Effect Transistors MOSFET P-CH MICRO6 P-Channel 40 V 3.4A (Ta) Surface Mount

Original IRF5803TRPBF Power Field-Effect Transistors MOSFET P-CH MICRO6 P-Channel 40 V 3.4A (Ta) Surface Mount

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