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Hot sale original electronics SKM75GDL123D Standard IGBT Modules IGBT six pack with chopper standard 1200(V) 75(A)

Manufacturer Product Number
SKM75GDL123D
Description

SKM75GDL123D Insulated Gate Bipolar Transistor 75A I(C) 1200V V(BR)CES N-Channel CASE SEMITRANS 18 PIN

Package Condition
Original
Datasheet
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Product Details

Section 6:
SEMITRANS® IGBT Modules; New Range 1995/96
3rd Version: Low Inductance, lower VCEsat, soft and fast CAL diodes 1); Preliminary Data 4)

1) CAL = Controlled Axial Lifetime Technology
2) 1600 V and 1700 V IGBTs have Visol = 4 kVrms/1 min
3) 1700 V types will replace 1600 V types in 1996
4) All data apply to one single IGBT element
5) Option enlarged diode, and suffix "1"
6) Option collector sense, add suffix "S" = case 60

Product Description

Type# Description
ANSC PART# ANSC- SKM75GDL123D
Manufacturer /
Part Package DO-204
Package Description CASE D73, SEMITRANS 6, 18 PIN
Pin Count 2
Case Connection ISOLATED
Collector Current-Max (IC) 75 A
Collector-Emitter Voltage-Max 1200 V
Configuration COMPLEX
Gate-Emitter Voltage-Max 20 V
Number of Elements 7
Number of Terminals 18
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 350 W
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Finish TIN SILVER
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 450 ns
Turn-on Time-Nom (ton) 100 ns
VCEsat-Max 3 V

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SKM75GDL123D

Product datasheet 

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Hot sale original electronics SKM75GDL123D Standard IGBT Modules IGBT six pack with chopper standard 1200(V) 75(A)

SKM75GDL123D Insulated Gate Bipolar Transistor 75A I(C) 1200V V(BR)CES N-Channel CASE SEMITRANS 18 PIN

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