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Hot sale Original SI2309CDS-T1-GE3 Transistor P-Channel 60 V 1.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
Manufacturer
Manufacturer Product Number
SI2309CDS-T1-GE3
Description
Original SI2309CDS-T1-GE3 Transistor MOSFET P-CH 60V 1.6A SOT23-3 P-Channel 60 V 1.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
Package Condition
Tape & Reel (TR) Cut Tape (CT)
Product Description
|
Type |
Description |
|---|---|
|
ANSC PART# |
ANSC - SI2309CDS-T1-GE3 |
|
Category |
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
|
Mfr |
Vishay Siliconix |
|
Series |
TrenchFET® |
|
Packaging |
Tape & Reel (TR) Cut Tape (CT) |
|
Part Status |
Active |
|
FET Type |
P-Channel |
|
Technology |
MOSFET (Metal Oxide) |
|
Drain to Source Voltage (Vdss) |
60 V |
|
Current - Continuous Drain (Id) @ 25°C |
1.6A (Tc) |
|
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
|
Rds On (Max) @ Id, Vgs |
345mOhm @ 1.25A, 10V |
|
Vgs(th) (Max) @ Id |
3V @ 250µA |
|
Gate Charge (Qg) (Max) @ Vgs |
4.1 nC @ 4.5 V |
|
Vgs (Max) |
±20V |
|
Input Capacitance (Ciss) (Max) @ Vds |
210 pF @ 30 V |
|
FET Feature |
- |
|
Power Dissipation (Max) |
1W (Ta), 1.7W (Tc) |
|
Operating Temperature |
-55°C ~ 150°C (TJ) |
|
Mounting Type |
Surface Mount |
|
Supplier Device Package |
SOT-23-3 (TO-236) |
|
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
|
Base Product Number |
SI2309 |
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Product datasheet
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Original SI2309CDS-T1-GE3 Transistor MOSFET P-CH 60V 1.6A SOT23-3 P-Channel 60 V 1.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
30000In stock:
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