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One-Stop Supply Original Electronic Components Trans MOSFET N-CH 200V 130A TO-247AC IRFP4668PBF
Manufacturer
Manufacturer Product Number
IRFP4668PBF
Description
IRFP4668PBF Transistors MOSFET N-CH 200V 130A TO247AC
Package Condition
Tube
Datasheet
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Product Details
Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
Product Description
| Type | Description |
| ANSC PART# | ANSC - IRFP4668PBF |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | / |
| Series | HEXFET® |
| Packaging | Tube |
| Part Status | / |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 130A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 9.7mOhm @ 81A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 241 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 10720 pF @ 50 V |
| FET Feature | - |
| Power Dissipation (Max) | 520W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AC |
| Package / Case | TO-247-3 |
| Base Product Number | IRFP4668 |
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Product datasheet
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IRFP4668PBF Transistors MOSFET N-CH 200V 130A TO247AC
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