Hot sale Original APT13005DI-G1 Single Bipolar Transistor TRAN NPN 450V 4A Bipolar Transistor 4MHz 25 W Through Hole TO-251

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APT13005DI-G1 Overview

In this device, the DC current gain is 8 @ 2A 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 900mV @ 1A, 4A.With the emitter base voltage set at 9V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.

APT13005DI-G1 Features

the DC current gain for this device is 8 @ 2A 5V
the vce saturation(Max) is 900mV @ 1A, 4A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz

APT13005DI-G1 Applications

There are a lot of Diodes Incorporated
APT13005DI-G1 applications of single BJT transistors.

• Inverter

• Interface

• Driver

• Muting

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