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NCE0125AI TO-251 High voltage N-channel IGBT field-effect transistor
Manufacturer
Manufacturer Product Number
NCE0125AI
Description
IGBT N-channel high-voltage field-effect transistor
Package Condition
TUBE
| Part# | NCE0125AI |
| Type： | high-voltage N-channel IGBT MOS transistor |
| Manufactor | NCE |
| DC | NEW |
| Describe | TO-251 |
| Supplier Device Packaging | TUBE |
| Technology | Trench |
| Polarity | N |
| BVDSS(V) | 100 |
| ID(A) | 25 |
| VTH(V) | 1.2 |
| RDS(ON)@10VTyp(mΩ) | 31 |
| RDS(ON)@4.5VTyp(mΩ) | 33 |
| QG(nC) | 70.4 |
| PD(W) | 70 |
| PKG | / |
Product Data Book：https://allnewsemi.shop/img/cms/NCE/NCE0125AI.pdf
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IGBT N-channel high-voltage field-effect transistor
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