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Hot-selling and scarce FQB44N10TM N-Channel QFET® MOSFET 100 V 43.5 A 39 mΩ TO-263 spot stock
Manufacturer Product Number
FQB44N10TM
Description
FQB44N10TM N-Channel QFET® MOSFET 100 V, 43.5 A, 39 mΩ TO-263 spot stock"
Package Condition
Tube
Datasheet
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Product Descriptions
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Product Features
43.5 A, 100 V, RDs(on) = 39 mΩ (Max.)@VGs = 10V,lD=21.75A
Low Gate Charge (Typ. 48 nC)
Low Crss (Typ. 85 pF)
100% Avalanche Tested
175°C Maximum Junction Temperature Rating
Product Specification
| Attribute | Attribute value |
| ANSM-Part# | ANSM-FQB44N10TM |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | - |
| Series | QFET® |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Digi-Reel® | |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25℃ | 43.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 21.75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250uA |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V |
| Power Dissipation (Max) | 3.75W (Ta), 146W (Tc) |
| Operating Temperature | -55℃ ~ 175℃(TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263 (D2PAK) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Base Product Number | FQB44N10 |
Product Photos
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FQB44N10TM N-Channel QFET® MOSFET 100 V, 43.5 A, 39 mΩ TO-263 spot stock"
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