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Hot-selling and scarce FGA50N100BNTD2 1000V, 50A NPT-Trench IGBT CO-PAK TO-3P spot stock
Manufacturer Product Number
FGA50N100BNTD2
Description
FGA50N100BNTD2 1000V, 50A NPT-Trench IGBT CO-PAK TO-3P spot stock
Package Condition
Tube
Datasheet
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(In addition to ANSC's own customized products)
Product Benefits
Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for micro-wave, Induction heating (I-H) Jar, induction heater, home appliance.
Product Features
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A
• High Input Impedance
• Built-in Fast Recovery Diode
• RoHS Compliant
Product Applications
Micro-Wave Oven, I-H Cooker, I-H Jar, Induction Heater, Home Appliance.
Product Specification
| Attribute | Attribute value |
| ANSM-Part# | ANSM-FGA50N100BNTD2 |
| Category | Discrete Semiconductor Products |
| Transistors | |
| IGBTs | |
| Single IGBTs | |
| Manufacturer | - |
| Packaging | Tube |
| Part Status | Obsolete |
| IGBT Type | NPT and Trench |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V |
| Current - Collector (Ic) (Max) | 50 A |
| Current - Collector Pulsed (Icm) | 200 A |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 60A |
| Power - Max | 156 W |
| Input Type | Standard |
| Gate Charge | 257 nC |
| Td (on/off) @ 25°C | 34ns/243ns |
| Test Condition | 600V, 60A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 75 ns |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Supplier Device Package | TO-3P |
| Base Product Number | FGA50N100 |
Product Photos
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FGA50N100BNTD2 1000V, 50A NPT-Trench IGBT CO-PAK TO-3P spot stock
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