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Hot-selling and scarce CSD86360Q5D Synchronous Buck NexFET™ Power Block QFN spot stock
CSD86360Q5D Synchronous Buck NexFET™ Power Block QFN spot stock
Product Descriptions
The CSD86360Q5D NexFET ™ power block is an optimized design for synchronous buck applications offering high-current, high-efficiency, and highfrequency capability in a small 5-mm × 6-mm outline. Optimized for 5-V gate drive applications, this product offers a flexible solution capable of offering a highdensity power supply when paired with any 5-V gate drive from an external controller/driver.
Product Features
• Half-Bridge Power Block
• 91% System Efficiency at 25 A
• Up to 50-A Operation
• High-Frequency Operation (Up to 1.5 MHz)
• High-Density SON 5-mm × 6-mm Footprint
• Optimized for 5-V Gate Drive
• Low-Switching Losses
• Ultra-Low-Inductance Package
• RoHS Compliant
• Halogen Free
• Lead-Free Terminal Plating
Product Applications
• Synchronous Buck Converters
– High-Frequency Applications
– High-Current, Low Duty Cycle Applications
• Multiphase Synchronous Buck Converters
• POL DC-DC Converters
• IMVP, VRM, and VRD Applications
Product Specifications
| Attribute | Attribute value |
| ANSM-Part# | ANSM-CSD86360Q5D |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| FET, MOSFET Arrays | |
| Manufacturer | - |
| Series | NexFET™ |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Digi-Reel® | |
| Part Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 50A |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12.6nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 2060pF @ 12.5 |
| Power - Max | 13W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerLDFN |
| Supplier Device Package | 8-LSON (5x6) |
| Base Product Number | CSD86360Q5 |
Product Photos

For more product information, please download the PDF
WhenCE is HIGH (deselected),the device assumes a standby mode at which the power dissipation can be reduced down to250 µW (typical) with CMOS input levels.