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You can contact me for the best price electronic components BOM (Silicon MOSFET Power 175MHz 6W) RD06HVF1
Manufacturer Product Number
RD06HVF1
Description
RD06HVF1 Transistor 1-Element Very High Frequency Band Silicon N-Channel Metal-oxide Semiconductor FET
Package Condition
Original
Datasheet
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Product Details
DESCRIPTION
RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
FEATURES
High power gain:
Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz
APPLICATION
For output stage of high power amplifiers in VHF band mobile radio sets.
Product Description
| Type# | Description |
| PART# | RD06HVF1 |
| Manufacturer | / |
| Package Description | FLANGE MOUNT, R-PSFM-T3 |
| Case Connection | SOURCE |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 50 V |
| Drain Current-Max (ID) | 3 A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 27.8 W |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
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RD06HVF1 Transistor 1-Element Very High Frequency Band Silicon N-Channel Metal-oxide Semiconductor FET
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