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Exact specifications should be obtained from the product data sheet.

Hot-selling and scarce SIS406DN-T1-GE3 N-Channel 30 V (D-S) MOSFET QFN8 spot stock

Manufacturer Product Number
SIS406DN-T1-GE3
Description

SIS406DN-T1-GE3 N-Channel 30 V (D-S) MOSFET QFN8 spot stock

Package Condition
Tape & Reel (TR)
Datasheet
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Product Features

• TrenchFET® power MOSFET

• PWM optimized

• New low thermal resistance PowerPAK® package with low 1.07 mm profile                      

• 100 % Rg and UIS tested         

Product Applications

• Adaptor switch

• Load switch

Product Specification

Attribute Attribute value
ANSM-Part# ANSM-SIS406DN-T1-GE3
Category Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Mfr -
Series TrenchFET®
Packaging Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 15 V
Power Dissipation (Max) 1.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
Base Product Number SIS406

Product Photos

1787985950302254.jpg

1787985950489c41.jpg

For more product information, please download the PDF

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Hot-selling and scarce SIS406DN-T1-GE3 N-Channel 30 V (D-S) MOSFET QFN8 spot stock

SIS406DN-T1-GE3 N-Channel 30 V (D-S) MOSFET QFN8 spot stock

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