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Hot-selling and scarce FDS6898A Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET SOP8 spot stock
Manufacturer Product Number
FDS6898A
Description
FDS6898A Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET SOP8 spot stock
Package Condition
Tape & Reel (TR)
Datasheet
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Product Descriptions
These N-Channel Logic Level MOSFETs are produced using that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required .
Product Features
9.4 A, 20 V
RDS(ON) = 14 m@ VGS = 4.5 V
RDS(ON) = 18 m@ VGS = 2.5 V
Low gate charge (16 nC typical)
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
Product Specification
| Attribute | Attribute value |
| ANSM-Part# | ANSM-FDS6898A |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| FET, MOSFET Arrays | |
| Manufacturer | - |
| Series | PowerTrench® |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Digi-Reel® | |
| Part Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id)@ 25°C | 9.4A |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 9.4A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1821pF @ 10V |
| Power - Max | 900mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Base Product Number | FDS6898 |
Product Photos
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FDS6898A Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET SOP8 spot stock
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