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Hot-selling and scarce SIHP8N50D-GE3 Power MOSFET 500 V 8.7A (Tc) 156W (Tc) Through Hole TO-220AB spot stock

Manufacturer Product Number
SIHP8N50D-GE3
Description

SIHP8N50D-GE3 Power MOSFET 500 V 8.7A (Tc) 156W (Tc) Through Hole TO-220AB spot stock

Package Condition
Tube
Datasheet
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Product Features

• Optimal Design

- Low Area Specific On-Resistance

- Low Input Capacitance (C iss)

- Reduced Capacitive Switching Losses

- High Body Diode Ruggedness

- Avalanche Energy Rated (UIS)

• Optimal Efficiency and Operation

- Low Cost

- Simple Gate Drive Circuitry

- Low Figure-of-Merit (FOM): Ron x Q g

- Fast Switching

Product Applications

• ​Consumer Electronics

- Displays (LCD or Plasma TV)

• Server and Telecom Power Supplies

- SMPS

• Industrial

- Welding

- Induction Heating

- Motor Drives

• Battery Chargers

Product Specification

Attribute Attribute value
ANSM-Part# ANSM-SIHP8N50D-GE3
Category Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Mfr -
Packaging Tube
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id)@ 25°C 8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 850mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 527 pF @ 100 V
Power Dissipation (Max) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number SIHP8

Product Photos

SIHP8N50D-GE3

For more product information, please download the PDF

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Hot-selling and scarce SIHP8N50D-GE3 Power MOSFET 500 V 8.7A (Tc) 156W (Tc) Through Hole TO-220AB spot stock

SIHP8N50D-GE3 Power MOSFET 500 V 8.7A (Tc) 156W (Tc) Through Hole TO-220AB spot stock

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