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Hot-selling and scarce SI4435DYPBF P-Channel 30 V 8A (Tc) 2.5W (Ta) Surface Mount 8SOIC spot stock
SI4435DYPBF P-Channel 30 V 8A (Tc) 2.5W (Ta) Surface Mount 8SOIC spot stock
Product Descriptions
These P-channel HEXFET Power MOSFETs from International Rectifier utilize advanced processingtechniques to achieve the extremely low on-resistance persilicon area . This benefit provides the designer with anextremely efficient device for use in battery and loadmanagement applications .
The SO-8 has been modified through a customizedleadframe for enhanced thermal characteristics andmultiple-die capability making it ideal in a variety of powerapplications . With these improvements, multiple devicescan be used in an application with dramatically reducedboard space . The package is designed for vapor phase,infrared, or wave soldering technique
Product Features
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
Product Specification
| Attribute | Attribute value |
| ANSM-Part# | ANSM-SI4435DYPBF |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | - |
| Series | HEXFET® |
| Packaging | Tube |
| Part Status | Discontinued at DigiKey |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id)@ 25°C | 8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 8A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2320 pF @ 15 V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Product Photos

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