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High voltage P-channel IGBT MOS tube NCE30P06J DFN6 hot selling spot original product chip
Manufacturer Product Number
NCE30P06J
Description
high-voltage P-channel IGBT field-effect transistor
Package Condition
Tape and Reel
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| Part# | NCE30P06J |
| Type： | high-voltage P-channel IGBT field-effect transistor |
| Manufactor | - |
| DC | NEW |
| Describe | DEN6 |
| Supplier Device Packaging | REEL |
| Technology | Trench |
| Polarity | P |
| BVDSS(V) | -30 |
| ID(A) | -6.5 |
| VTH(V) | -1.3 |
| RDS(ON)@10VTyp(mΩ) | 24 |
| RDS(ON)@4.5VTyp(mΩ) | 34 |
| QG(nC) | 9.2 |
| PD(W) | 2.8 |
| PKG | / |
Product Data Book：https://allnewsemi.shop/img/cms/NCE30P06J.pdf
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high-voltage P-channel IGBT field-effect transistor
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