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NCE10TD60BK TO252 spot original sales of high-voltage N-channel IGBT MOS transistor chips
Manufacturer Product Number
NCE10TD60BK
Description
high-voltage N-channel IGBT field-effect transistor
Package Condition
Tape and Reel
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| Part# | NCE10TD60BK |
| Type： | N-Channel Enhancement Mode Power MOSFET |
| Manufactor | - |
| DC | NEW |
| Describe | TO252 |
| Supplier Device Packaging | REEL |
| V(BR)CES (V) | 600 |
| IC(A)100℃ | 10 |
| PD(W)25℃ | 100 |
| VGE(V) | ±30 |
| VTH(V)Typ | 5 |
| VCE(sat)(V)@VGE=15V, 25℃Typ | 1.7 |
| VCE(sat)(V)@VGE=15V, 25℃Max | 1.9 |
| Switching Frequency | 0~60KHz |
| Tsc(us) | 5 |
| PKG | / |
Product Data Book：https://allnewsemi.shop/img/cms/NCE10TD60BK.pdf
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high-voltage N-channel IGBT field-effect transistor
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