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High voltage N-channel IGBT MOS transistor NCE6003Y SOT23 one-stop electronic component supply chip
Manufacturer Product Number
NCE6003Y
Description
High-voltage N-channel IGBT field-effect transistor
Package Condition
Tape and Reel
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| Part# | NCE6003Y |
| Type： | N-Channel Enhancement Mode Power MOSFET |
| Manufactor | - |
| DC | NEW |
| Describe | SOT-23 |
| Supplier Device Packaging | REEL |
| Technology | Trench |
| Polarity | N |
| BVDSS(V) | 60 |
| ID(A) | 3 |
| VTH(V) | 1.2 |
| RDS(ON)@10VTyp(mΩ) | 78 |
| RDS(ON)@4.5VTyp(mΩ) | 95 |
| QG(nC) | 14.6 |
| PD(W) | 1.7 |
| PKG | / |
Product Data Book：https://allnewsemi.shop/img/cms/NCE6003Y.pdf
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High-voltage N-channel IGBT field-effect transistor
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