Free hotline:
86-755-88844016
+852 2632 9637
Image shown is a representation only.
Exact specifications should be obtained from the product data sheet.
BOM ordering service NCEP12T12D high-voltage N-channel IGBT field-effect transistor TO263 chip for spot sale
Manufacturer
Manufacturer Product Number
NCEP12T12D
Description
high-voltage N-channel IGBT field-effect transistor
Package Condition
TUBE
| Part# | NCEP12T12D |
| Type： | High-voltage N-channel IGBT field-effect transistor |
| Manufactor | NCE |
| DC | NEW |
| Describe | TO-263 |
| Supplier Device Packaging | TUBE |
| Technology | SGT-I |
| Polarity | N |
| BVDSS(V) | 120 |
| ID(A) | 129 |
| VTH(V) | 3.3 |
| RDS(ON)@10VTyp(mΩ) | 4.8 |
| QG(nC) | 84.7 |
| PD(W) | 185 |
| PKG | / |
Product Data Book：https://allnewsemi.shop/img/cms/NCE/NCEP12T12D.pdf
.jpg)
.png)
Other Products In The same category:
high-voltage N-channel IGBT field-effect transistor
50000In stock:
Can ship immediately