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High voltage N+N channel IGBT field-effect transistor chip NCE60ND09AS SOP8 is supplied in stock with original packaging
Manufacturer
Manufacturer Product Number
NCE60ND09AS
Description
High-voltage N+N-channel IGBT field-effect transistor
Package Condition
Tape and Reel
| Part# | NCE60ND09AS |
| Type： | high-voltage N+N-channel IGBT field-effect transistor |
| Manufactor | NCE |
| DC | NEW |
| Describe | SOP8 |
| Supplier Device Packaging | REEL |
| Technology | Trench dual core |
| Polarity | N+N |
| BVDSS(V) | 60 |
| ID(A) | 9 |
| VTH(V) | 1.8 |
| RDS(ON)@10VTyp(mΩ) | 11 |
| RDS(ON)@4.5VTyp(mΩ) | 13.5 |
| QG(nC) | 58 |
| PD(W) | 2.6 |
| PKG | / |
Product Data Book: https://allnewsemi.shop/img/cms/NCE/NCE60ND09AS.pdf
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High-voltage N+N-channel IGBT field-effect transistor
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