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High voltage N+N channel IGBT field-effect transistor chip NCE60ND09AS SOP8 is supplied in stock with original packaging
Manufacturer
Manufacturer Product Number
NCE60ND09AS
Description
High-voltage N+N-channel IGBT field-effect transistor
Package Condition
Tape and Reel
Part# | NCE60ND09AS |
Type: | high-voltage N+N-channel IGBT field-effect transistor |
Manufactor | NCE |
DC | NEW |
Describe | SOP8 |
Supplier Device Packaging | REEL |
Technology | Trench dual core |
Polarity | N+N |
BVDSS(V) | 60 |
ID(A) | 9 |
VTH(V) | 1.8 |
RDS(ON)@10VTyp(mΩ) | 11 |
RDS(ON)@4.5VTyp(mΩ) | 13.5 |
QG(nC) | 58 |
PD(W) | 2.6 |
PKG | / |
Product Data Book: https://allnewsemi.shop/img/cms/NCE/NCE60ND09AS.pdf
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50000In stock:
Can ship immediately