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Hot sale Original IRLML6401TRPBF Transistors MOSFET P-CH 12V 4.3A P-Channel 12 V 4.3A (Ta) 1.3W (Ta) Surface Mount SOT-23

Manufacturer
Manufacturer Product Number
IRLML6401TRPBF
Description

Original IRLML6401TRPBF Transistors MOSFET P-CH 12V 4.3A P-Channel 12 V 4.3A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23

Package Condition
Tape & Reel (TR) Cut Tape (CT)

Product Description

The IRLML6401TRPBF is a high-reliability, surface-mount P-channel enhancement-mode HEXFET from Infineon Technologies. This discrete semiconductor product is designed for switching applications and features a robust construction with a maximum junction temperature of 150°C.

Product Features  

· High reliability and robust construction

· P-channel enhancement-mode HEXFET

· Surface-mount package (TO-236-3, SC-59, SOT-23-3)

· Lead-free and RoHS3 compliant

· Operating temperature range of -55°C to 150°C

· Maximum continuous drain current of 4.3A

· Maximum drain-to-source voltage of 12V

· Maximum gate-to-source voltage of ±8V

· Low on-resistance (Rds(on)) of 50mΩ

· Fast switching times, with a fall time of 210ns and rise time of 32ns

Product Applications

· Primary applications: Switching power supplies, DC-DC converters, and motor control systems

· Secondary applications: Audio amplifiers, LED drivers, and other high-frequency switching applications

Embedded Modules:

· This component is commonly used in various embedded systems, including:

· Power supplies

· Motor control systems

· Audio amplifiers

· LED drivers 

Product Description

Type Description
ANSC PART# ANSC - IRLML6401TRPBF
Category Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Packaging Tape & Reel (TR)
Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 50mOhm @ 4.3A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 830 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1.3W (Ta)
Operating Temperature  -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Micro3™/SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number IRLML6401

Actual image of the product 

36715.jpg

Product datasheet   

For more information, please download

IRLML6401TRPBF(2).png

IRLML6401TRPBF(3).png

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Hot sale Original IRLML6401TRPBF Transistors MOSFET P-CH 12V 4.3A P-Channel 12 V 4.3A (Ta) 1.3W (Ta) Surface Mount SOT-23

Original IRLML6401TRPBF Transistors MOSFET P-CH 12V 4.3A P-Channel 12 V 4.3A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23

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