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NCE30H11G DFN8 chip high-voltage N-channel IGBT field-effect transistor available in stock
Manufacturer
Manufacturer Product Number
NCE30H11G
Description
high-voltage N-channel IGBT field-effect transistor
Package Condition
Tape and Reel
Part# | NCE30H11G |
Type: | high-voltage N-channel IGBT field-effect transistor |
Manufactor | NCE |
DC | NEW |
Describe | DFN8 |
Supplier Device Packaging | REEL |
Technology | Trench |
Polarity | N |
BVDSS(V) | 30 |
ID(A) | 110 |
VTH(V) | 1.1 |
RDS(ON)@10VTyp(mΩ) | 1.78 |
RDS(ON)@4.5VTyp(mΩ) | 2.25 |
QG(nC) | 140 |
PD(W) | 70 |
PKG | / |
Product Data Book:https://allnewsemi.shop/img/cms/NCE/NCE30H11G.pdf
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