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Hot sale Original IRFB4227PBF Transistors MOSFET N-CH 200V 65A TO220AB N-Channel 200 V 65A (Tc) 330W (Tc) Through Hole TO-220AB

Manufacturer Product Number
IRFB4227PBF
Description

Original IRFB4227PBF Transistors MOSFET N-CH 200V 65A TO220AB N-Channel 200 V 65A (Tc) 330W (Tc) Through Hole TO-220AB

Package Condition
Tube
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Product Description

 

The IRFB4227PBF is a 200V single N-channel HEXFET? Power MOSFET PDP switch for plasma display panels that can be used for sustain, energy recovery, and pass switching. It achieves a low on-resistance per silicon area and an EPULSE rating by incorporating the most up-to-date approaches.

Product Features  

 

● High Repetitive Peak Current Capability for Reliable Operation

● Short Fall & Rise Times for Fast Switching

● 175°C Operating Junction Temperature for Improved Ruggedness

● Repetitive Avalanche Capability for Robustness and Reliability

● Class-D Audio Amplifier 300W-500W (Half-bridge)

● Advanced Process Technology

● Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications

● Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications

● Low QG for Fast Respon

Product Applications

 

● Power Management

● Industrial

● DC-DC Converters

● Motor Control

● Automotive Applications

 

Product Description

Type Description
ANSC PART#  ANSC- IRFB4227PBF
Category Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Mfr -
Series HEXFET®
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 46A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4600 pF @ 25 V
FET Feature -
Power Dissipation (Max) 330W (Tc)
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number IRFB4227

Actual image of the product 

IRFB4227PBF

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Hot sale Original IRFB4227PBF Transistors MOSFET N-CH 200V 65A TO220AB N-Channel 200 V 65A (Tc) 330W (Tc) Through Hole TO-220AB

Original IRFB4227PBF Transistors MOSFET N-CH 200V 65A TO220AB N-Channel 200 V 65A (Tc) 330W (Tc) Through Hole TO-220AB

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