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Hot sale Original BSP613PH6327XTSA1 MOSFET P-CH 60V 2.9A SOT223-4 P-Channel 60 V 2.9A (Ta) 1.8W (Ta) Surface Mount
Original BSP613PH6327XTSA1 MOSFET P-CH 60V 2.9A SOT223-4 P-Channel 60 V 2.9A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
Product Description
BSP613PH6327XTSA1 is a P-channel Power MOSFET transistor from the with a voltage of 60V. The operating temperature of the BSP613PH6327XTSA1 is -55°C~150°C TJ and its maximum power dissipation is 1.8W. The BSP613P H6327 is a -60V P-channel Power MOSFET that consistently achieves the highest quality and performance requirements in critical power system design standards such as on-state resistance and Figure of Merit.
Product Features
Enhancement mode
Avalanche rated
dv/dt Rated
AEC-Q101 qualified
Product Applications
Automotive
Consumer Electronics
Power Management
Motor Drive & Control
Product Description
| Type | Description |
| ANSC PART# | ANSC- BSP613PH6327XTSA1 |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | - |
| Series | SIPMOS® |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 2.9A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 875 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT223-4 |
| Package / Case | TO-261-4, TO-261AA |
| Base Product Number | BSP613 |
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