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Hot sale Original 2N6661 Transistors MOSFET N-CH 90V 350MA TO39 N-Channel 90 V 350mA (Tj) 6.25W (Tc) Through Hole TO-39
Original 2N6661 Transistors MOSFET N-CH 90V 350MA TO39 N-Channel 90 V 350mA (Tj) 6.25W (Tc) Through Hole TO-39
Product Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 50pF @ 24V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 350mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 90V, and this device has a drainage-to-source breakdown voltage of 90VV.This device has a drain-to-source resistance of 4Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 800mV, which means that it will not activate any of its functions when its threshold voltage reaches 800mV.For this transistor to work, a voltage 90V is required between drain and source (Vdss).
Product Features
a continuous drain current (ID) of 350mA
a drain-to-source breakdown voltage of 90V voltage
single MOSFETs transistor is 4Ohm
a threshold voltage of 800mV
a 90V drain to source voltage (Vdss)
Product Applications
There are a lot of Microchip Technology
2N6661 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Product Description
ANSC PART# |
ANSC- 2N6661 |
Part# |
2N6661 |
Type: |
Transistors |
Manufactor |
Original |
DC |
new |
Part Status |
Active |
Product images
Product Attributes
Type |
Description |
---|---|
Category |
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
Mfr |
Microchip Technology |
Series |
- |
Packaging |
Bag |
Part Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
90 V |
Current - Continuous Drain (Id) @ 25°C |
350mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On) |
5V, 10V |
Rds On (Max) @ Id, Vgs |
4Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id |
2V @ 1mA |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
50 pF @ 24 V |
FET Feature |
- |
Power Dissipation (Max) |
6.25W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-39 |
Package / Case |
TO-205AD, TO-39-3 Metal Can |
Product datasheet
For more information, please download
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