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You can contact me for the best price IRFH7932TR2PBF Power Field-Effect Transistor Hot sale Original
Manufacturer Product Number
IRFH7932TR2PBF
Description
IRFH7932TR2PBF Power Field-Effect Transistor Hot sale Original
Package Condition
Cut Tape (CT)
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Product Details
| Brief Description: The IRFH7932TR2PBF is a N-Channel HEXFET? MOSFET, designed for high-frequency and high-power applications. It features a continuous drain current of 24A and a drain-to-source breakdown voltage of 30V. Features: N-Channel MOSFET with a continuous drain current of 24A Drain-to-source breakdown voltage of 30V Drain-to-source resistance of 3.3mOhm Gate-to-source voltage of 20V Nominal gate-to-source voltage of 1.8V Threshold voltage of 1.8V Power dissipation of 3.1W Operating temperature range of -55°C to 150°C Lead-free and RoHS compliant Surface mount package with 8 pins Application Grade: The IRFH7932TR2PBF is designed for high-frequency and high-power applications, such as: Power switching Motor control Power supplies Lighting control Automotive applications Applications: Power switching in automotive applications, such as engine management systems and power windows Motor control in industrial applications, such as conveyor belts and robotic arms Power supplies in telecommunications and data centers Lighting control in residential and commercial buildings High-frequency switching in medical devices and industrial automation systems Overall, the IRFH7932TR2PBF is a high-performance N-Channel MOSFET designed for demanding applications that require high power, high frequency, and high reliability. |
Product Description
| Type# | Description |
| ANSC PART# | ANSC- IRFH7932TR2PBF |
| Part# | IRFH7932TR2PBF |
| Type： | Electronic components |
| Manufactor | Original |
| DC | new |
| Part Status | Active |
| Product packaging | PQFN |
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IRFH7932TR2PBF Power Field-Effect Transistor Hot sale Original
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