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You can contact me for the best price electronic components BOM FQA38N30 TO-3P 300V N-Channel MOSFET

Manufacturer Product Number
FQA38N30
Description

FQA38N30 Transistor N-Channel 300 V 38.4A (Tc) 290W (Tc) Through Hole TO-3P

Package Condition
Tube
Datasheet
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Product Details

Description

UniFET™ MOSFET is high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Features

• RDS(on) = 70 m (Typ.) @ VGS = 10 V, ID = 19 A

• Low Gate Charge (Typ. 60 nC)

• Low Crss (Typ. 60 pF)

• 100% Avalanche Tested

• ESD Improved Capability

• RoHS Compliant

Applications

• PDP TV

• Uninterruptible Power Supply

• AC-DC Power Supply

Product Description

Type# Description
PART# FQA38N30
Category Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Mfr /
Series QFET®
Packaging Tube
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V
Current - Continuous Drain (Id) @ 25°C 38.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 85mOhm @ 19.2A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4400 pF @ 25 V
FET Feature -
Power Dissipation (Max) 290W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-3P
Package / Case TO-3P-3, SC-65-3
Base Product Number FQA3

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FQA38N30

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You can contact me for the best price electronic components BOM FQA38N30 TO-3P 300V N-Channel MOSFET

FQA38N30 Transistor N-Channel 300 V 38.4A (Tc) 290W (Tc) Through Hole TO-3P

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