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Hot sale original G4PC40W INSULATED GATE BIPOLAR TRANSISTOR(Vces 600V, Vce(on)typ.2.05V, @Vge15V, Ic 20A)
Manufacturer
Manufacturer Product Number
G4PC40W
Description
G4PC40W INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)
Package Condition
Original
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Product Details
| Benefits • Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode) • Of particular benefit to single-ended converters and boost PFC topologies 150W and higher • Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz) Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability |
Product Description
| Type# | Description |
| ANSC PART# | ANSC- G4PC40W |
| Part# | G4PC40W |
| Type： | Electronic components |
| Manufactor | Original |
| DC | new |
| Part Status | Active |
| Product packaging | TO-247 |
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G4PC40W INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)
10In stock:
Can ship immediately