Hot sale original NVMFS5830NLT1G MOSFET N-CH 40V 185A SO8FL

Product Details

NVMFS5830NLT1G Overview

This device's continuous drain current (ID) is 29A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 40 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 2.3mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 22 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 40V drain to source voltage (Vdss).

NVMFS5830NLT1G Features

a continuous drain current (ID) of 29A
the turn-off delay time is 40 ns
single MOSFETs transistor is 2.3mOhm
a 40V drain to source voltage (Vdss)

NVMFS5830NLT1G Applications

There are a lot of ON Semiconductor
NVMFS5830NLT1G applications of single MOSFETs transistors.

• Consumer Appliances

• Lighting

• Uninterruptible Power Supply

• AC-DC Power Supply

• Synchronous Rectification for ATX 1 Server I Telecom PSU

• Motor drives and Uninterruptible Power Supplies

• Micro Solar Inverter

• DC/DC converters

• Power Tools

• Motor Drives and Uninterruptible Power Supples

Product Description

Product Attributes

Specifications

Actual image of the product                

Product Data Book

​

Payment&Transportation

Official Certificate&Certificate

Standard packaging

Multiple product supply

Welcome to visit our company

Warehouse Real Shot