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Hot selling product original stock DS35Q2GA-A2E 3.3V/1.8V x1/x2/x4 2G-bit SPI NAND FLASH IC CHIP BGA24
DS35Q2GA-A2E-Random access: 25us (w/o ECC), 90us(w/ ECC),Serial access: 104MHz (1.8V/3.3V),Page program time: 300us (Typ)
Product Features
■ Serial Peripheral Interface
- Mode 0 and Mode 3
■ Standard, Dual, Quad SPI
- Standard SPI: SCLK, CS#, SI, SO
- Dual SPI: SCLK, CS#, SIO0, SIO1
- Quad SPI: SCLK, CS#, SIO0, SIO1, SIO2, SIO3
■ SUPPLY VOLTAGE
- VCC = 1.8/3.3 Volt core supply voltage for
Program, Erase and Read operations
■ PAGE READ / PROGRAM
- (2048+64 spare) byte
- Random access: 25us (w/o ECC), 90us(w/ ECC)
- Serial access: 104MHz (1.8V/3.3V)
- Page program time: 300us (Typ)
■ FAST BLOCK ERASE
- Block size: (128K + 4K) bytes
- Block erase time: 2ms (Typ)
■ MEMORY CELL ARRAY
- (2K + 64) bytes x 64 pages x 2048 blocks
■ ELECTRONIC SIGNATURE
- Manufacturer Code
- Device Code
■ STATUS REGISTER
■ HARDWARE DATA PROTECTION
- Enable/Disable protection with WP# Pin
- Top or Bottom, Block selection combination
■ DATA RETENTION
- Max cycling: 100K Program / Erase cycles
- Data retention: 10 Years (4bit/512byte ECC)
- Internal ECC can be enabled (4bit ECC)
- Block zero is a valid block and will be valid for at
least 1K program-erase cycles with ECC
Specifications
Attribute | Attribute value |
ANSM-Part# | ANSM-DS35Q2GA-A2E |
Type: | SPI NAND |
Manufactor | Dosilicon |
DC | Standard |
Describe | NEW |
Supplier Device Packaging | BGA24 |
Package | TRAY |
Density | 2Gb |
Voltage (V) | 3.3 |
Speed (MHz/CLK) | 104MHz |
Temp.Range | -40℃~105℃ |
Actual product photos
Product Data Book:
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