One stop electronic component supply MT46V16M16P-6TF DOUBLE DATA RATE SDRAM - DDR Memory IC 256Mbit Parallel 167MHz 700ps TSOP66

Manufacturer Product Number

MT46V16M16P-6TF

Description

IC DRAM 256MBIT PAR 66TSOP

Package Condition

TRAY

Datasheet

MT46V16M16P-6TF

Product Details
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Product Features

• VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V

• VDD = +2.6V ±0.1V, VDDQ = +2.6V ±0.1V (DDR400)

• Bidirectional data strobe (DQS) transmitted/ received with data, that is, source-synchronous data capture (x16 has two – one per byte)

• Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle

• Differential clock inputs (CK and CK#)

• Commands entered on each positive CK edge

• DQS edge-aligned with data for READs; centeraligned with data for WRITEs

• DLL to align DQ and DQS transitions with CK

• Four internal banks for concurrent operation

• Data mask (DM) for masking write data (x16 has two – one per byte)

• Programmable burst lengths (BL): 2, 4, or 8

• Auto refresh

– 64ms, 8192-cycle(Commercial & Industrial)

– 16ms, 8192-cycle (Automotive)

• Self refresh (not available on AT devices)

• Longer-lead TSOP for improved reliability (OCPL)

• 2.5V I/O (SSTL_2-compatible)

• Concurrent auto precharge option supported

• tRAS lockout supported (tRAP = tRCD)

Specifications

Attribute	Attribute value
ANSM-Part#	ANSM-MT46V16M16P-6TF
Category	Integrated Circuits (ICs)
	Memory
	Memory
Mfr	-
Series	-
Package	Tray
Product Status	Obsolete
DigiKey Programmable	Not Verified
Memory Type	Volatile
Memory Format	DRAM
Technology	SDRAM - DDR
Memory Size	256Mbit
Memory Organization	16M x 16
Memory Interface	Parallel
Clock Frequency	167 MHz
Write Cycle Time - Word, Page	15ns
Access Time	700 ps
Voltage - Supply	2.3V ~ 2.7V
Operating Temperature	0°C ~ 70°C (TA)
Mounting Type	Surface Mount
Package / Case	66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package	66-TSOP
Base Product Number	MT46V16M16