Spot sales of LH28F160BJE-BTL90 Flash Memory 16M (1M × 16 / 2M × 8）TSOP48

Product Descriptions

LH28F160BJE-BTL90 can operate at VCC=2.7V-3.6V and VCCW=2.7V-3.6V or 11.7V-12.3V. Its low voltage operation capability realize battery life and suits for cellular phone application.

Its Boot, Parameter and Main-blocked architecture, low voltage and extended cycling provide for highly flexible component suitable for portable terminals and personal computers. Its enhanced suspend capabilities provide for an ideal solution for code + data storage applications.

For secure code storage applications, such as networking, where code is either directly executed out of flash or downloaded to DRAM, the LH28F160BJE-BTL90 offers four levels of protection: absolute protection with VCCW≤VCCWLK, selective hardware block locking or flexible software block locking. These alternatives give designers ultimate control of their code security needs.

The LH28F160BJE-BTL90 is manufactured on SHARP’s 0.25µm ETOXTM* process technology. It come in industry-standard package: the 48-lead TSOP, ideal for board constrained applications.

Product Features

■ Low Voltage Operation

VCC=VCCW=2.7V-3.6V Single Voltage

■ User-Configurable ×8 or ×16 Operation

■ High-Performance Read Access Time

90ns(VCC=2.7V-3.6V)

■ Operating Temperature

0°C to +70°C

■ Low Power Management

Typ. 2µA (VCC=3.0V) Standby Current

Automatic Power Savings Mode Decreases ICCR in

Static Mode

Typ. 120µA (VCC=3.0V, TA=+25°C, f=32kHz)

Read Current

■ Optimized Array Blocking Architecture

Two 4K-word (8K-byte) Boot Blocks

Six 4K-word (8K-byte) Parameter Blocks

Thirty-one 32K-word (64K-byte) Main Blocks

Bottom Boot Location

■ Extended Cycling Capability

Minimum 100,000 Block Erase Cycles

■ Enhanced Automated Suspend Options

Word/Byte Write Suspend to Read

Block Erase Suspend to Word/Byte Write

Block Erase Suspend to Read

■ Enhanced Data Protection Features

Absolute Protection with VCCW≤VCCWLK

Block Erase, Full Chip Erase, Word/Byte Write and

Lock-Bit Configuration Lockout during Power

Transitions

Block Locking with Command and WP#

Permanent Locking

■ Automated Block Erase, Full Chip Erase,

Word/Byte Write and Lock-Bit Configuration

Command User Interface (CUI)

Status Register (SR)

■ SRAM-Compatible Write Interface

■ Industry-Standard Packaging

48-Lead TSOP

■ ETOXTM* Nonvolatile Flash Technology

■ CMOS Process (P-type silicon substrate)

■ Not designed or rated as radiation hardened

Product Photos

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