Hot-selling and scarce MBM29LV400BC-90PFTN FLASH MEMORY CMOS 4M (512K X 8/256K X 16) BIT TSSOP spot stock

Product Features

• Single 3.0 V read, program, and erase

Minimizes system level power requirements

• Compatible with JEDEC-standard commands

Uses same software commands as E2 PROMs

• Compatible with JEDEC-standard world-wide pinouts

48-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type)

44-pin SOP (Package suffix: PF)

48-pin CSOP (Package suffix: PCV)

48-ball FBGA (Package suffix: PBT)

•  Minimum 100,000 program/erase cycles

•  High performance

70 ns maximum access time

• Sector erase architecture

One 8K word, two 4K words, one 16K word, and seven 32K words sectors in word mode

One 16K byte, two 8K bytes, one 32K byte, and seven 64K bytes sectors in byte mode

Any combination of sectors can be concurrently erased. Also supports full chip erase

•  Boot Code Sector Architecture

T = Top sector

B = Bottom sector

•  Embedded EraseTM Algorithms

Automatically preprograms and erases the chip or any sector

•  Embedded ProgramTM Algorithms

Automatically writes and verifies data at specified address

•  Data Polling and Toggle Bit feature for detection of program or erase cycle completion

•  Ready/Busy output (RY/BY)

Hardware method for detection of program or erase cycle completion

• Automatic sleep mode

When addresses remain stable, automatically switch themselves to low power mode

•  Low VCC write inhibit ≤ 2.5 V

•  Erase Suspend/Resume

Suspends the erase operation to allow a read in another sector within the same device

Product Photos

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